Part Number Hot Search : 
N7002 MA3D752A ADP1610 BZX84 2N339 APT15 C0518 CXA1182Q
Product Description
Full Text Search
 

To Download PTFC261402FCV1R0 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive device?observe handling precautions! data sheet 1 of 10 rev. 05, 2016-06-21 ptfc261402fc thermally-enhanced high power rf ldmos fet 140 w, 28 v, 2620 ? 2690 mhz description the ptfc261402fc is a 140-watt ldmos fet intended for use in multi-standard cellular power ampli? er applications in the 2620 to 2690 mhz frequency band. features include input and output matching, high gain and thermally-enhanced package with earless ? ange. manufactured with in? neon's advanced ldmos process, this device provides excellent thermal performance and superior reliability. ptfc261402fc package h-37248-4 features ? broadband internal matching ? wide video bandwidth ? typical pulsed cw performance, 2655 mhz, 28 v (combined outputs) - output power at p 1db = 140 w - ef? ciency = 50% - gain = 16.5 db ? typical single-carrier wcdma performance, 2655 mhz, 28 v - output power = 46 dbm avg - gain = 17.5 db - ef? ciency = 30.5% ? capable of handling 10:1 vswr @ 28 v, 140 w (cw) output power ? integrated esd protection ? human body model class 1c (per ansi/esda/ jedec js-001) ? low thermal resistance ? pb-free and rohs compliant rf characteristics single-carrier wcdma speci? cations (combined outputs, tested in in? neon production test ? xture) v dd = 28 v, i dq = 900 ma, p out = 28 w avg, ? = 2655 mhz, 3gpp signal, channel bandwidth = 3.84 mhz, peak/average = 10 db @ 0.01% ccdf characteristic symbol min typ max unit gain g ps 17 18 ? db drain efficiency ? d 23.5 25 ? % adjacent channel power ratio acpr ? ?34 ?31 dbc -60 -40 -20 0 20 40 60 0 4 8 12 16 20 24 33 38 43 48 53 efficiency (%) peak/average (db), gain (db) average output power (dbm) single-carrier wcdma drive-up v dd = 28 v, i dq = 900 ma, ? = 2620 mhz 3gpp wcdma signal, 7.5 db par, 3.84 mhz bw gain efficiency par @ 0.01% ccdf c261402fc_gr1
ptfc261402fc data sheet 2 of 10 rev. 05, 2016-06-21 dc characteristics (each side) characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v (br)dss 65 ? ? v drain leakage current v ds = 28 v, v gs = 0 v i dss ? ? 1 a v ds = 63 v, v gs = 0 v i dss ? ? 10 a gate leakage current v gs = 10 v, v ds = 0 v i gss ? ? 1 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) ? 0.1 ? ? operating gate voltage v ds = 28 v, i dq = 900 ma v gs ? 2.5 ? v maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs ?6 to +10 v operating voltage v dd 0 to +32 v junction temperature t j 225 c storage temperature range t stg ?65 to +150 c thermal resistance (t case = 70c, 140 w cw) r ? jc 0.30 c/w ordering information type and version order code package and description shipping ptfc261402fc v1 r0 PTFC261402FCV1R0xtma1 thermally-enhanced earless ? ange, push-pull tape & reel, 50 pcs ptfc261402fc v1 r250 ptfc261402fcv1r250xtma1 thermally-enhanced earless ? ange, push-pull tape & reel, 250 pcs pinout diagram lead connections for ptfc261402fc h-37248-4_pd_10-10-2012 s d1 d2 g1 g2 pin description d1, d2 drain g1, g2 gate s source (? ange)
data sheet 3 of 10 rev. 05, 2016-06-21 ptfc261402fc typical performance (data taken in a production test fixture) -60 -40 -20 0 20 40 60 0 4 8 12 16 20 24 33 38 43 48 53 efficiency (%) peak/average (db), gain (db) average output power (dbm) single-carrier wcdma drive-up v dd = 28 v, i dq = 900 ma, ? = 2655 mhz 3gpp wcdma signal, 7.5 db par, 3.84 mhz bw gain efficiency par @ 0.01% ccdf c261402fc_g r2 -60 -40 -20 0 20 40 60 0 4 8 12 16 20 24 33 38 43 48 53 efficiency (%) peak/average (db), gain (db) average output power (dbm) single-carrier wcdma drive-up v dd = 28 v, i dq = 900 ma, ? = 2690 mhz 3gpp wcdma signal, 7.5 db par, 3.84 mhz bw gain efficiency par @ 0.01% ccdf c261402fc_gr3 0 10 20 30 40 50 -60 -50 -40 -30 -20 -10 33 38 43 48 53 drain efficiency(%) acpr (db) average output power (dbm) single-carrier wcdma 3gpp drive-up v dd = 28 v, i dq = 900 ma, 3gpp wcdma signal, 7.5 db par, 3.84 mhz bw c261402fc_gr5 2620 mhz 2655 mhz 2690 mhz efficiency acp up acp low 43 44 45 46 47 48 49 13 14 15 16 17 18 19 2570 2610 2650 2690 2730 drain  efficiency  (%) gain (db) frequency (mhz) single-carrier wcdma broadband performance v dd = 28 v, i dq = 900 ma, p out = 50 dbm, 3gpp wcdma signal, 7.5 db par efficiency gain c261402fc_gr8
ptfc261402fc data sheet 4 of 10 rev. 05, 2016-06-21 typical performance (cont.) -30 -25 -20 -15 -10 -5 -30 -25 -20 -15 -10 -5 2570 2610 2650 2690 2730 return loss (db) acp up (dbc) frequency (mhz) single-carrier wcdma broadband performance v dd = 28 v, i dq = 900 ma, p out = 50 dbm, 3gpp wcdma signal, 7.5 db par return loss acp up c 261402f c_gr9 -30 -25 -20 -15 -10 -5 -30 -25 -20 -15 -10 -5 2570 2610 2650 2690 2730 return loss (db) acp up (dbc) frequency (mhz) single-carrier wcdma broadband performance v dd = 28 v, i dq = 900 ma, p out = 49 dbm, 3gpp wcdma signal, 7.5 db par return loss acp up c261402f c_gr11 37 39 41 43 45 47 14 15 16 17 18 19 2570 2610 2650 2690 2730 efficiency (%) gain (db) frequency (mhz) single-carrier wcdma broadband performance v dd = 28 v, i dq = 900 ma, p out = 48 dbm, 3gpp wcdma signal, 7.5 db par efficiency gain c261402f c_gr12 42 43 44 45 46 47 14 15 16 17 18 19 2570 2610 2650 2690 2730 efficiency (%) gain (db) frequency (mhz) single-carrier wcdma broadband performance v dd = 28 v, i dq = 900 ma, p out = 49 dbm, 3gpp wcdma signal, 7.5 db par efficiency gain c261402f c_gr10
data sheet 5 of 10 rev. 05, 2016-06-21 ptfc261402fc typical performance (cont.) 0 10 20 30 40 50 60 15 16 17 18 19 20 33 35 37 39 41 43 45 47 49 51 53 efficiency (%) gain (db) output power (dbm) cw performance v dd = 28 v, i dq = 900 ma efficiency gain 2620 mhz 2655 mhz 2690 mhz c261402f c_gr14 5 15 25 35 45 55 15 16 17 18 19 20 34 36 38 40 42 44 46 48 50 52 efficiency (%) gain (db) output power (dbm) cw performance at selected v dd , (single side) i dq = 900 ma, ? = 2620 mhz v dd = 32 v v dd = 28 v v dd = 24 v gain efficiency c261402f c_gr15 0 10 20 30 40 50 60 15 16 17 18 19 20 34 36 38 40 42 44 46 48 50 52 efficiency (%) gain (db) output power (dbm) cw performance at selected v dd , (single side) i dq = 900 ma, ? = 2655 mhz v dd = 32 v v dd = 28 v v dd = 24 v gain efficiency c261402f c_gr16 -30 -25 -20 -15 -10 -5 -30 -25 -20 -15 -10 -5 2570 2610 2650 2690 2730 return loss (db) acp up (dbc) frequency (mhz) single-carrier wcdma broadband performance v dd = 28 v, i dq = 900 ma, p out = 48 dbm, 3gpp wcdma signal, 7.5 db par return loss acp up c261402fc_gr13
ptfc261402fc data sheet 6 of 10 rev. 05, 2016-06-21 load pull performance single side load pull performance ? pulsed cw signal: 16 sec, 10% duty cycle; 28 v, 450 ma p 1db class ab max output power max pae freq [mhz] zs ? zl ? gain [db] p out [dbm] p out [w] pae % zl ? gain [db] p out [dbm] p out [w] pae % 2620 12.1 ? j1.0 2.0 ? j8.8 15.8 50.01 100 53.9 3.8 ? j7.4 18 48.39 69 60.2 2655 15.7 ? j0.2 2.0 ? j9.0 15.7 49.98 99 53.2 3.5 ? j7.7 17.9 48.50 71 59.5 2690 17.8 ? j12.4 2.0 ? j9.2 15.7 49.79 95 51.3 3.6 ? j7.8 18.1 48.38 69 58.8 z source z load g d g s d typical performance (cont.) 0 10 20 30 40 50 60 14 15 16 17 18 19 20 34 36 38 40 42 44 46 48 50 52 efficiency (%) gain (db) output power (dbm) cw performance at selected v dd , (single side) i dq = 900 ma, ? = 2690 mhz v dd = 32 v v dd = 28 v v dd = 24 v v dd = 32 v v dd = 28 v v dd = 24 v gain efficiency c261402f c_gr17 -35 -30 -25 -20 -15 -10 -5 17 18 19 20 2540 2580 2620 2660 2700 2740 input return loss (db) gain (db) frequency (mhz) small signal cw gain & input return loss, single side v dd = 28 v, i dq = 900 ma irl gain c261402f c_gr19
data sheet 7 of 10 rev. 05, 2016-06-21 ptfc261402fc reference circuit c211 r803 rf_out c205 c210 r101 r104 c212 c201 c102 r103 c801 c803 s1 l2 r805 c103 c209 c207 ptfc261402_out_01 rf_in c208 c203 c804 c104 c208 r103 s3 s2 c204 r802 c802 l1 c101 c202 ptfc261402_in_01 c261402fc_cd_1-30-13 s4 s5 r804 s6 r04350, .020 (60) r04350, .020 (60) v dd v dd v dd ptfc261402fc dut ptfc261402fc test fixture part no. ltn/ptfc261402fc pcb rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, ? r = 3.66 find gerber ? les for this test ? xture on the in? neon web site at ( http://www.in? neon.com/rfpower ) reference circuit assembly diagram (not to scale)
ptfc261402fc data sheet 8 of 10 rev. 05, 2016-06-21 components information component description suggested supplier p/n input c101, c104 chip capacitor, 10 pf atc atc800a100jt c102, c103 capacitor, 10 f murata electronics north america lll31bc70g106ma01l c801, c802, c803 capacitor, 1 nf panasonic ecj-1vb1h102k l1, l2 chip inductor, 47 nh coilcraft 0603hp-47nxjlu r101, r102 resistor, 10 w panasonic electronic components erj-3geyj100v r103, r104 resistor, 10 w panasonic electronic components erj-8geyj100v r801, r804 resistor, 1k w panasonic electronic components erj-8geyj102v r802 resistor, 1.3k w panasonic electronic components erj-3geyj132v r803 resistor, 1.2k w panasonic electronic components erj-3geyj122v s1, s2 high frequency emi ? lter, 1 f murata electronics north america nfm18ps105r0j3d s3 potentiometer, 2k ? bourns inc. 3224w-1-202e s4 voltage regulator national semiconductor lm7805 s5 transistor in? neon technologies bcp56 output c201, c202, c203, c210 capacitor, 10 f taiyo yuden umk325c7106mm-t c204, c208 electrolytic capacitor, 220 f panasonic electronic components eee-fp1v221ap c205, c206 chip capacitor, 1 pf atc atc800a1r2bt c206, c211 chip capacitor, 2 pf atc atc800a1r6bt c207 chip capacitor, 8 pf atc atc800a8r2ct c209, c212 chip capacitor, 10 pf atc atc800a100jt reference circuit (cont.)
data sheet 9 of 10 rev. 05, 2016-06-21 ptfc261402fc package outline specifications package h-37248-4 find the latest and most complete information about products and packaging at the in? neon internet page ( http://www.in? neon.com/rfpower ) diagram notesunless otherwise speci?ed: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. primary dimensions are mm. alternate dimensions are inches. 3. all tolerances 0.127 [.005] unless speci?ed otherwise. 4. pins: d1, d2 C drains; g1, g2 C gates; s C source. 5. lead thickness: 0.10 + 0.076/C0.025 mm [0.004+0.003/C0.001 inch]. 6. gold plating thickness: 1.14 0.38 micron [45 15 microinch]. & / / & & / ; >@ ? >?@ ; >@ /,' >@ )/$1*( >@ ;? >?@ ? >?@ 63+ >@ ;5    > 5   @ ' ' * *  >@  >@ 6 ;?; >?;@  >@  >@ ? >?@ +bsrbb >@ $


▲Up To Search▲   

 
Price & Availability of PTFC261402FCV1R0

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X